MCP14E9 Series

Dual 3 A MOSFET Gate Driver with Enable

Catalog

Dual 3 A MOSFET Gate Driver with Enable

Part	Driven Configuration	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Input Type	Mounting Type	Number of Drivers	Supplier Device Package	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Operating Temperature [Max]	Operating Temperature [Min]	Channel Type	Voltage - Supply [Max]	Voltage - Supply [Min]	Package / Case	Package / Case [y]	Package / Case [x]	Package / Case	Package / Case
Microchip Technology MCP14E9-E/SN	Low-Side	17 ns	14 ns	Inverting	Surface Mount	2	8-SOIC	3 A	3 A	150 °C	-40 °C	Independent	18 V	4.5 V	8-SOIC	3.9 mm	0.154 in
Microchip Technology MCP14E9T-E/SN	Low-Side	17 ns	14 ns	Inverting	Surface Mount	2	8-SOIC	3 A	3 A	150 °C	-40 °C	Independent	18 V	4.5 V	8-SOIC	3.9 mm	0.154 in
Microchip Technology MCP14E9-E/MF	Low-Side	17 ns	14 ns	Inverting	Surface Mount	2	8-DFN-S (6x5)	3 A	3 A	150 °C	-40 °C	Independent	18 V	4.5 V	8-VDFN Exposed Pad
Microchip Technology MCP14E9-E/P	Low-Side	17 ns	14 ns	Inverting	Through Hole	2	8-PDIP	3 A	3 A	150 °C	-40 °C	Independent	18 V	4.5 V	8-DIP			0.3 in	7.62 mm

Catalog

Dual 3 A MOSFET Gate Driver with Enable

Key Features

- High peak output Current: 3 A (typical)

- Independent Enable Function for each Driver

- Low Shoot-Through/Cross-Conduction Current in output Stage

- Wide input supply Operating Range: 4.5 V to 18 V

- 1800 pF in 20 ns (typical)

- Short Delay Times: 40 ns (typical)

- Matched rise/fall Times

- Low output Impedance: 2.2 Ω (typical)

- Latch-up Protected: Will withstand 1.5 A Reverse Current

- Input are TTL/CMOS compatible and will withstand negative swings up to 5 V

- ESD Protected: 4 kV

Description

The MCP14E9/E10/E11 devices are a family of 3 A, dual output buffers/MOSFET gate drivers with separate enable functions for each output. As MOSFET gate drivers, the MCP14E9/E10/E11 can charge 1,800 pF gate capacitance in under 25 ns (max).The inputs are TTL/CMOS compatible and provide 300 mV of hysteresis between the high and low input levels that allows it to be driven from slow rising and falling signals and provide noise immunity.