STD2HNK60Z Series

N-channel 600 V, 3.5 Ohm typ., 2 A SuperMESH Power MOSFET in a DPAK package

Catalog

N-channel 600 V, 3.5 Ohm typ., 2 A SuperMESH Power MOSFET in a DPAK package

Part	Power Dissipation (Max)	Vgs (Max)	FET Type	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs(th) (Max) @ Id	Operating Temperature [Max]	Operating Temperature [Min]	Current - Continuous Drain (Id) @ 25°C	Package / Case	Drain to Source Voltage (Vdss)	Mounting Type	Technology	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs
STMicroelectronics STD2HNK60Z	45 W	30 V	N-Channel	4.8 Ohm	280 pF	4.5 V	150 °C	-55 °C	2 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	600 V	Surface Mount	MOSFET (Metal Oxide)	DPAK	10 V	15 nC

Catalog

N-channel 600 V, 3.5 Ohm typ., 2 A SuperMESH Power MOSFET in a DPAK package

Description

This high-voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH technology by STMicroelectronics, an optimization of the well-established PowerMESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.