WNSC1 Series

Catalog

DIODE SIL CARB 650V 10A TO247-2

Part	Current - Average Rectified (Io)	Technology	Package / Case	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package	Capacitance @ Vr, F	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Mounting Type	Speed	Operating Temperature - Junction	Operating Temperature - Junction [Max]	Voltage - Forward (Vf) (Max) @ If [Max]	Current - Average Rectified (Io) (per Diode)	Diode Configuration
WeEn Semiconductors WNSC10650WQ	10 A	SiC (Silicon Carbide) Schottky	TO-247-2	1.7 V	TO-247-2	328 pF	650 V	60 µA	Through Hole	500 mA	175 °C
WeEn Semiconductors WNSC101200Q	10 A	SiC (Silicon Carbide) Schottky	TO-220-2	1.6 V	TO-220AC	510 pF	1.2 kV	110 µA	Through Hole	500 mA		175 ░C
WeEn Semiconductors WNSC12650WQ	12 A	SiC (Silicon Carbide) Schottky	TO-247-2		TO-247-2	328 pF	650 V	60 µA	Through Hole	500 mA	175 °C		1.7 V
WeEn Semiconductors WNSC12650T6J	12 A	SiC (Silicon Carbide) Schottky	4-VSFN Exposed Pad	12 A	5-DFN (8x8)	328 pF	650 V	60 µA	Surface Mount	500 mA	175 °C		1.8 V
WeEn Semiconductors WNSC16650CWQ		SiC (Silicon Carbide) Schottky	TO-247-3	1.7 V	TO-247-3		650 V	50 µA	Through Hole	500 mA	175 °C			16 A	1 Pair Common Cathode