Catalog
PNP power Darlington transistor
Description
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The devices are manufactured in planar base island technology with monolithic Darlington configuration.
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PNP power Darlington transistor
PNP power Darlington transistor
| Part | Power - Max [Max] | Vce Saturation (Max) @ Ib, Ic | Supplier Device Package | Current - Collector (Ic) (Max) [Max] | Voltage - Collector Emitter Breakdown (Max) [Max] | Transistor Type | Current - Collector Cutoff (Max) [Max] | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Operating Temperature | Package / Case | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|
 STMicroelectronics | 40 W | 2.5 V | SOT-32-3 | 4 A | 80 V | PNP - Darlington | 500 çA | 750 | 150 °C | TO-126-3 TO-225AA | Through Hole |