APTM20AM08FTG-Module Series

200V/Single switch + series and parallel diode/Si MOSFET

Catalog

200V/Single switch + series and parallel diode/Si MOSFET

Part	Vgs (Max)	Vgs(th) (Max) @ Id	Technology	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max) [Max]	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs [Max]	Vgs(th) (Max) @ Id [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Power - Max [Max]	Configuration	Configuration	Power Dissipation (Max)
Microchip Technology APTM20UM04SAG	30 V	5 V	MOSFET (Metal Oxide)	Chassis Mount	560 nC	200 V	5 mOhm	10 V	N-Channel	150 °C	-40 °C	SP6	28800 pF	1560 W	SP6	417 A
Microchip Technology APTM20SKM08TG	30 V		MOSFET (Metal Oxide)	Chassis Mount		200 V		10 V	N-Channel	150 °C	-40 °C	SP4	14400 pF	781 W	SP4	208 A	10 mOhm	5 V	280 nC
Microchip Technology APTM20HM20FTG		5 V	MOSFET (Metal Oxide)	Chassis Mount	112 nC	200 V	24 mOhm			150 °C	-40 °C	SP4	6850 pF		SP4	89 A				357 W	4 N-Channel
Microchip Technology APTM20HM10FG			MOSFET (Metal Oxide)	Chassis Mount		200 V	12 mOhm			150 °C	-40 °C	SP6	13700 pF		SP6	175 A		5 V	224 nC	694 W	4 N-Channel
Microchip Technology APTM20HM20STG		5 V	MOSFET (Metal Oxide)	Chassis Mount	112 nC	200 V	24 mOhm			150 °C	-40 °C	SP4	6850 pF		SP4	89 A				357 W	4 N-Channel
Microchip Technology APTM20HM16FTG		5 V	MOSFET (Metal Oxide)	Chassis Mount	140 nC	200 V				150 °C	-40 °C	SP4	7220 pF		SP4	104 A	19 mOhm			390 W	4 N-Channel
Microchip Technology APTM20AM04FG		5 V	MOSFET (Metal Oxide)	Chassis Mount	560 nC	200 V				150 °C	-40 °C	SP6			SP6	372 A	5 mOhm			1250 W		2 N-Channel (Half Bridge)
Microchip Technology APTM20SKM04G	30 V	5 V	MOSFET (Metal Oxide)	Chassis Mount	560 nC	200 V		10 V	N-Channel	150 °C	-40 °C	SP6	28900 pF		SP6	372 A	5 mOhm						1250 W
Microchip Technology APTM20DUM08TG			MOSFET (Metal Oxide)	Chassis Mount	280 nC	200 V				150 °C	-40 °C	SP4	14400 pF		SP4	208 A	10 mOhm	5 V		781 W		2 N-Channel (Dual)
Microchip Technology APTM20AM08FTG			MOSFET (Metal Oxide)	Chassis Mount	280 nC	200 V				150 °C	-40 °C	SP4	14400 pF		SP4	208 A	10 mOhm	5 V		781 W		2 N-Channel (Half Bridge)

Catalog

200V/Single switch + series and parallel diode/Si MOSFET

Key Features

• * Configuration: Single switch + series and parallel diodes

• * VDSS (V): 200

• * RDSon (mR) typ: 4

• * Current (A) Tc=80C: 310

• * Silicon type: MOSFET

• * Package: SP6C

Description

* FREDFETs * Low RDSon * Low input and Miller capacitance * Low gate charge * Fast intrinsic reverse diode * Avalanche energy rated * Very rugged * Kelvin source for easy drive * Low stray inductance * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Internal thermistor for temperature monitoring (optional) * RoHS Compliant