R8003 Series

High-speed Switching, Nch 800V 3A, TO-252 (DPAK), Power MOSFET

Catalog

High-speed Switching, Nch 800V 3A, TO-252 (DPAK), Power MOSFET

Part	Power Dissipation (Max)	Mounting Type	Operating Temperature	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Technology	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Vgs (Max)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Type	Power Dissipation (Max) [Max]
Rohm Semiconductor R8003KNXC7G	36 W	Through Hole	150 °C	3 A	10 V	TO-220-3 Full Pack	MOSFET (Metal Oxide)	4.5 V	11.5 nC	800 V	1.8 Ohm	20 V	TO-220FM	300 pF	N-Channel
Rohm Semiconductor R8003KND3TL1		Surface Mount	150 °C	3 A	10 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	MOSFET (Metal Oxide)	4.5 V	11.5 nC	800 V	1.8 Ohm	20 V	TO-252	300 pF	N-Channel	45 W

Catalog

High-speed Switching, Nch 800V 3A, TO-252 (DPAK), Power MOSFET

Description

The R8xxxKNx series are high-speed switching products, Super Junction MOSFETs, that place an emphasis on high efficiency. This series products achieve higher efficiency via high-speed switching. High-speed switching makes it possible to contribute to higher efficiency in PFC and LLC circuits.