STH10N80K5-2AG Series

Automotive-grade N-channel 800 V, 0.60 Ohm typ., 8 A MDmesh K5 Power MOSFET in an H2PAK-2 package

Catalog

Automotive-grade N-channel 800 V, 0.60 Ohm typ., 8 A MDmesh K5 Power MOSFET in an H2PAK-2 package

Part	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Max]	Operating Temperature [Min]	Power Dissipation (Max)	Mounting Type	Drain to Source Voltage (Vdss)	Technology	FET Type	Qualification	Rds On (Max) @ Id, Vgs	Package / Case	Grade
STMicroelectronics STH10N80K5-2AG	10 V	5 V	H2Pak-2	426 pF	8 A	30 V	17.3 nC	150 °C	-55 °C	121 W	Surface Mount	800 V	MOSFET (Metal Oxide)	N-Channel	AEC-Q101	680 mOhm	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Automotive

Catalog

Automotive-grade N-channel 800 V, 0.60 Ohm typ., 8 A MDmesh K5 Power MOSFET in an H2PAK-2 package

Description

This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.