STS7P4LLF6 Series

P-channel 40 V, 0.0175 Ohm typ., 7 A STripFET F6 Power MOSFET in a SO-8 package

Catalog

P-channel 40 V, 0.0175 Ohm typ., 7 A STripFET F6 Power MOSFET in a SO-8 package

Part	Package / Case	Package / Case	Package / Case	Rds On (Max) @ Id, Vgs	Supplier Device Package	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	FET Type	Drain to Source Voltage (Vdss)	Operating Temperature	Vgs(th) (Max) @ Id	Vgs (Max)	Technology	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs
STMicroelectronics STS7P4LLF6	0.154 in	8-SOIC	3.9 mm	20.5 mOhm	8-SO	2.7 W	7 A	P-Channel	40 V	150 °C	1 V	20 V	MOSFET (Metal Oxide)	4.5 V 10 V	Surface Mount	22 nC

Catalog

P-channel 40 V, 0.0175 Ohm typ., 7 A STripFET F6 Power MOSFET in a SO-8 package

Description

This device is a P-channel Power MOSFET developed using the STripFET F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on)in all packages.