L6393 Series

Half bridge gate driver

Catalog

Half bridge gate driver

Part	Number of Drivers	Mounting Type	Gate Type	Input Type	Rise / Fall Time (Typ)	Rise / Fall Time (Typ)	High Side Voltage - Max (Bootstrap) [Max]	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Driven Configuration	Voltage - Supply [Max]	Voltage - Supply [Min]	Channel Type	Logic Voltage - VIL, VIH	Package / Case	Package / Case
STMicroelectronics L6393DTR	2	Surface Mount	IGBT MOSFET (N-Channel)	Non-Inverting	75 ns	35 ns	600 V	430 mA	290 mA	-40 C	125 °C	14-SO	Half-Bridge	20 V	10 VDC	Synchronous	1.1 V 1.9 V	0.154 in 3.9 mm	14-SOIC
STMicroelectronics L6393D	2	Surface Mount	IGBT MOSFET (N-Channel)	Non-Inverting	75 ns	35 ns	600 V	430 mA	290 mA	-40 C	125 °C	14-SO	Half-Bridge	20 V	10 VDC	Synchronous	1.1 V 1.9 V	0.154 in 3.9 mm	14-SOIC

Catalog

Half bridge gate driver

Description

The L6393 is a high voltage device manufactured with the BCD™ "offline" technology. It is a single chip half bridge gate driver for the N-channel power MOSFET or IGBT. The high-side (floating) section is designed to stand a voltage rail up to 600 V. The logic inputs are CMOS/TTL compatible down to 3.3 V for the easy interfacing microcontroller/DSP. The IC embeds an uncommitted comparator available for protections against overcurrent, overtemperature, etc.