IRF6 Series
Manufacturer: STMicroelectronics
MOSFET N-CH 250V 8A TO220AB
| Part | Package / Case | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | Supplier Device Package | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs [Max] | FET Type | Technology | Operating Temperature | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | Power Dissipation (Max) [Max] | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds [Max] | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics | TO-220-3 | 250 V | 10 V | Through Hole | TO-220 | 20 V | 770 pF | 51.8 nC | N-Channel | MOSFET (Metal Oxide) | 150 °C | 4 V | 450 mOhm | 80 W | 8 A | |||
STMicroelectronics | TO-220-3 | 200 V | 10 V | Through Hole | TO-220 | 20 V | N-Channel | MOSFET (Metal Oxide) | 150 °C | 4 V | 180 mOhm | 18 A | 72 nC | 1560 pF | 125 W |