
HMC8500PM5E Series
10 W (40 dBm), 0.01 GHz to 2.8 GHz, GaN Power Amplifier
Manufacturer: Analog Devices
Catalog
10 W (40 dBm), 0.01 GHz to 2.8 GHz, GaN Power Amplifier
Key Features
• High small signal gain: 15.0 dB typical
• POUT: 40 dBm typical at PIN= 30 dBm
• High PAE: 55% typical at PIN= 30 dBm
• Frequency range: 0.01 GHz to 2.8 GHz across all frequencies
• VDD= 28 V at quiescent current of 100 mA
• Internal prematchingSimple and compact external tuning for optimal performance
• 5 mm × 5 mm, 32-lead LFCSP package
Description
AI
The HMC8500PM5E is a gallium nitride (GaN), broadband power amplifier delivering 10 W (40 dBm), typical, with up to 55% power added efficiency (PAE) across an instantaneous bandwidth of 0.01 GHz to 2.8 GHz, at an input power of 30 dBm. The typical gain flatness is 3 dB at small signal levels.The HMC8500PM5E is ideal for pulsed or continuous wave (CW) applications, such as wireless infrastructure, radars, public mobile radios, and general-purpose amplification.The HMC8500PM5E amplifier is externally tuned using low cost, surface-mount components and is available in a compact LFCSP package.Note that, throughout this data sheet, multifunction pins, such as RFIN/VGG, are referred to either by the entire pin name or by a single function of the pin, for example, RFIN, when only that function is relevantAPPLICATIONSExtended battery operation for public mobile radiosPower amplifier stage for wireless infrastructuresTest and measurement equipmentCommercial and military radarsGeneral-purpose transmitter amplification