STH150N10F7-2 Series

N-channel 100 V, 3,4mOhm typ., 110 A, STripFET F7 Power MOSFET in a H2PAK-2 package

Catalog

N-channel 100 V, 3,4mOhm typ., 110 A, STripFET F7 Power MOSFET in a H2PAK-2 package

Part	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Current - Continuous Drain (Id) @ 25°C	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Package / Case	Supplier Device Package	Technology	Vgs (Max)	Operating Temperature [Max]	Operating Temperature [Min]	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Mounting Type
STMicroelectronics STH150N10F7-2	117 nC	8115 pF	110 A	N-Channel	10 V	250 W	3.9 mOhm	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	H2Pak-2	MOSFET (Metal Oxide)	20 V	175 °C	-55 °C	100 V	4.5 V	Surface Mount

Catalog

N-channel 100 V, 3,4mOhm typ., 110 A, STripFET F7 Power MOSFET in a H2PAK-2 package

Description

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.