STB11N Series

Catalog

MOSFET N-CH 600V 10A I2PAK

Part	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Package / Case	Supplier Device Package	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Technology	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Vgs (Max)	Operating Temperature	Power Dissipation (Max)	Operating Temperature [Max]	Operating Temperature [Min]
STMicroelectronics STB11NM60N-1	4 V	450 mOhm	31 nC	10 A	600 V	I2PAK TO-262-3 Long Leads TO-262AA	I2PAK	Through Hole	850 pF	MOSFET (Metal Oxide)	10 V	N-Channel	25 V	150 °C	90 W
STMicroelectronics STB11N52K3	4.5 V	510 mOhm	51 nC	10 A	525 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	TO-263 (D2PAK)	Surface Mount	1400 pF	MOSFET (Metal Oxide)	10 V	N-Channel	30 V		125 W	150 °C	-55 °C