JANTXV2N2060L-Dual-Transistor Series

NPN Silicon Dual 60V, 0.5A

Catalog

NPN Silicon Dual 60V, 0.5A

Part	Qualification	Voltage - Collector Emitter Breakdown (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Mounting Type	Transistor Type	Power - Max [Max]	Grade	Package / Case	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Current - Collector Cutoff (Max) [Max]
Microchip Technology JANTXV2N2060L	MIL-PRF-19500/270	60 V	300 mV	50	Through Hole	2 NPN (Dual)	2.12 W	Military	TO-78-6 Metal Can	500 mA	TO-78-6	10 µA
Microchip Technology JAN2N2060	MIL-PRF-19500/270	60 V	300 mV	50	Through Hole	2 NPN (Dual)	600 mW	Military	TO-78-6 Metal Can	500 mA	TO-78-6	10 µA
Microchip Technology JAN2N2060L	MIL-PRF-19500/270	60 V	300 mV	50	Through Hole	2 NPN (Dual)	2.12 W	Military	TO-78-6 Metal Can	500 mA	TO-78-6	10 µA

Catalog

NPN Silicon Dual 60V, 0.5A

Key Features

- The device package outline is 6 terminal metal can similar to a modified TO-77 or TO-99 for all device types.

Description

This specification covers the performance requirements for two electrically isolated, matched NPN, silicon 2N2060 Unitized transistors as one dual unit. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500/270.