Catalog
650V 11A TO-263, High-speed switching Power MOSFET
Description
AI
R6511KNJ is a power MOSFET with low on-resistance and fast switching, suitable for the switching application.
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650V 11A TO-263, High-speed switching Power MOSFET
650V 11A TO-263, High-speed switching Power MOSFET
| Part | Rds On (Max) @ Id, Vgs | FET Type | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Operating Temperature | Supplier Device Package | Technology | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Mounting Type | Package / Case | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | 400 mOhm | N-Channel | 20 V | 22 nC | 150 °C | LPTS | MOSFET (Metal Oxide) | 124 W | 10 V | 5 V | 650 V | Surface Mount | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 11 A |