Catalog
650V/Full bridge/IGBT modules
Key Features
• + Configuration: Full bridge
• + VCES (V): 650
• + VCESat (V): 1.85
• + Current (A) Tc=80C: 30
• + Silicon type: TRENCH 3 FAST
• + Package: SP3F
Description
AI
* IGBT 3 fast
* Low voltage drop
* Low leakage current
* Low switching losses
* Kelvin emitter for easy drive
* Low stray inductance
* Stable temperature behavior
* Very rugged
* Direct mounting to heatsink (isolated package)
* Low junction to case thermal resistance
* Internal thermistor for temperature monitoring (optional)
* Easy paralleling due to positive TC of VCEsat
* Low profile
* RoHS Compliant