STP34 Series

N-channel 650 V, 0.09 Ohm typ., 28 A MDmesh M5 Power MOSFET in TO-220 package

Catalog

N-channel 650 V, 0.09 Ohm typ., 28 A MDmesh M5 Power MOSFET in TO-220 package

Part	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Operating Temperature	Vgs(th) (Max) @ Id	Vgs (Max)	FET Type	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Technology	Drain to Source Voltage (Vdss)	Package / Case	Power Dissipation (Max)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]
STMicroelectronics STP34N65M5	62.5 nC	110 mOhm	150 °C	5 V	25 V	N-Channel	28 A	10 V	2700 pF	Through Hole	MOSFET (Metal Oxide)	650 V	TO-220-3	190 W	TO-220
STMicroelectronics STP34NM60N		105 mOhm	150 °C	4 V	25 V	N-Channel	29 A	10 V		Through Hole	MOSFET (Metal Oxide)	600 V	TO-220-3	250 W	TO-220	2722 pF	80 nC

Catalog

N-channel 650 V, 0.09 Ohm typ., 28 A MDmesh M5 Power MOSFET in TO-220 package

Description

These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.