APTGLQ40DDA120CT3G-Module Series

1200V/Three level inverter/IGBT modules

Catalog

1200V/Three level inverter/IGBT modules

Part	Operating Temperature [Min]	Operating Temperature [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Vce(on) (Max) @ Vge, Ic	Supplier Device Package	IGBT Type	Current - Collector (Ic) (Max) [Max]	Configuration	Package / Case	Mounting Type	Power - Max [Max]	Input	Input Capacitance (Cies) @ Vce
Microchip Technology APTGLQ40H120T1G	-40 C	175 °C	1200 V	2.4 V	SP1	Trench Field Stop	75 A	Full Bridge	SP1	Through Hole	250 W	Standard	2.3 nF
Microchip Technology APTGLQ40HR120CT3G	-40 C	175 °C	1200 V	2.4 V	SP3	Trench Field Stop	75 A		SP3	Through Hole	250 W	Standard	2.3 nF
Microchip Technology APTGLQ40DDA120CT3G	-40 C	175 °C	1200 V	2.4 V	SP6	Trench Field Stop	75 A	Dual Boost Chopper	SP6	Through Hole	250 W	Standard	2.3 nF

Catalog

1200V/Three level inverter/IGBT modules

Key Features

- Configuration: Three level inverter

- VCES (V): 1200

- VCESat (V): 2.05

- Current (A) Tc=80C: 40

- Silicon type: TRENCH 4 FAST/SiC Diode

- Package: SP3F

Description

* IGBT 4 fast * Low voltage drop * Low tail current * Low leakage current * Kelvin emitter for easy drive * Low stray inductance * Stable temperature behavior * Very rugged * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Internal thermistor for temperature monitoring (optional) * Easy paralleling due to positive TC of VCEsat * Low profile * RoHS Compliant