STP20NM50 Series

N-channel 500 V, 200 mOhm typ., 20 A MDmesh Power MOSFET in a TO-220 package

Catalog

N-channel 500 V, 200 mOhm typ., 20 A MDmesh Power MOSFET in a TO-220 package

Part	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Mounting Type	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Technology	Power Dissipation (Max)	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package	FET Type	Drain to Source Voltage (Vdss)
STMicroelectronics STP20NM50	56 nC	30 V	20 A	5 V	Through Hole	250 mOhm	1480 pF	10 V	TO-220-3	MOSFET (Metal Oxide)	192 W	150 °C	-65 °C	TO-220	N-Channel	500 V

Catalog

N-channel 500 V, 200 mOhm typ., 20 A MDmesh Power MOSFET in a TO-220 package

Description

The MDmesh™is a new revolutionary Power MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics and dynamic performances.