TPSI2140-Q1 Series
Automotive 1200-V 50-mA isolated switch with 2-mA avalanche rating
Manufacturer: Texas Instruments
Catalog
Automotive 1200-V 50-mA isolated switch with 2-mA avalanche rating
Key Features
• Qualified for automotive applicationsAEC-Q100 grade 1: –40 to 125°C T AIntegrated avalanche rated MOSFETsDesigned and qualified for reliability during overvoltage conditions, including system level dielectric withstand testing (Hi-Pot)I AVA = 2-mA for 5-s pulses, 1-mA for 60-s pulses1200-V standoff voltageR ON = 130-Ω (T J = 25°C)T ON, T OFF < 700-µsLow primary side supply current9-mA ON state current3.5-µA OFF state currentFunctional Safety CapableDocumentation availableto aid in ISO 26262 and IEC 61508 system designRobust isolation barrier:> 26 year projected lifetime at 1000-V RMS / 1500-V DC working voltageIsolation rating, V ISO, up to 3750-V RMS / 5300-V DCPeak surge, V IOSM, up to 5000-V± 100-V/ns typical CMTISOIC 11-pin (DWQ) package with wide pins for improved thermal performanceCreepage and clearance ≥ 8-mm (primary-secondary)Creepage and clearance ≥ 6-mm (across switch terminals)Safety-related certifications(Planned) DIN VDE V 0884-11:2017-01(Planned) UL 1577 component recognition programQualified for automotive applicationsAEC-Q100 grade 1: –40 to 125°C T AIntegrated avalanche rated MOSFETsDesigned and qualified for reliability during overvoltage conditions, including system level dielectric withstand testing (Hi-Pot)I AVA = 2-mA for 5-s pulses, 1-mA for 60-s pulses1200-V standoff voltageR ON = 130-Ω (T J = 25°C)T ON, T OFF < 700-µsLow primary side supply current9-mA ON state current3.5-µA OFF state currentFunctional Safety CapableDocumentation availableto aid in ISO 26262 and IEC 61508 system designRobust isolation barrier:> 26 year projected lifetime at 1000-V RMS / 1500-V DC working voltageIsolation rating, V ISO, up to 3750-V RMS / 5300-V DCPeak surge, V IOSM, up to 5000-V± 100-V/ns typical CMTISOIC 11-pin (DWQ) package with wide pins for improved thermal performanceCreepage and clearance ≥ 8-mm (primary-secondary)Creepage and clearance ≥ 6-mm (across switch terminals)Safety-related certifications(Planned) DIN VDE V 0884-11:2017-01(Planned) UL 1577 component recognition program
Description
AI
The TPSI2140-Q1 is an isolated solid state relay designed for high voltage automotive and industrial applications. The TPSI2140-Q1 uses TI’s high reliability capacitive isolation technology in combination with internal back-to-back MOSFETs to form a completely integrated solution requiring no secondary side power supply.
The primary side of the device is powered by only 9 mA of input current and incorporates a fail-safe EN pin preventing any possibility of back powering the VDD supply. In most applications, the VDD pin of the device should be connected to a system supply between 5 V–20 V and the EN pin of the device should be driven by a GPIO output with logic HI between 2.1 V–20 V. In other applications, The VDD and EN pins could be driven together directly from the system supply or from a GPIO output. All control configurations of the TPSI2140-Q1 do not require additional external components such as a resistor and/or low side switch that are typically required in photo relay solutions.
The secondary side consists of back-to-back MOSFETs with a standoff voltage of ±1.2 kV from S1 to S2. The TPSI2140-Q1 MOSFET’s avalanche robustness and thermally conscious package design allow it to robustly support system level dielectric withstand testing (HiPot) and DC fast charger surge currents of up to 2 mA without requiring any external components.
The TPSI2140-Q1 is an isolated solid state relay designed for high voltage automotive and industrial applications. The TPSI2140-Q1 uses TI’s high reliability capacitive isolation technology in combination with internal back-to-back MOSFETs to form a completely integrated solution requiring no secondary side power supply.
The primary side of the device is powered by only 9 mA of input current and incorporates a fail-safe EN pin preventing any possibility of back powering the VDD supply. In most applications, the VDD pin of the device should be connected to a system supply between 5 V–20 V and the EN pin of the device should be driven by a GPIO output with logic HI between 2.1 V–20 V. In other applications, The VDD and EN pins could be driven together directly from the system supply or from a GPIO output. All control configurations of the TPSI2140-Q1 do not require additional external components such as a resistor and/or low side switch that are typically required in photo relay solutions.
The secondary side consists of back-to-back MOSFETs with a standoff voltage of ±1.2 kV from S1 to S2. The TPSI2140-Q1 MOSFET’s avalanche robustness and thermally conscious package design allow it to robustly support system level dielectric withstand testing (HiPot) and DC fast charger surge currents of up to 2 mA without requiring any external components.
