JANTX2N6649-Darlington Series

Darlington PNP Silicon Power -40V -80V, -10A

Catalog

Darlington PNP Silicon Power -40V -80V, -10A

Part	Mounting Type	Grade	DC Current Gain (hFE) (Min) @ Ic, Vce	Voltage - Collector Emitter Breakdown (Max)	Qualification	Package / Case	Power - Max [Max]	Transistor Type	Operating Temperature [Max]	Operating Temperature [Min]	Vce Saturation (Max) @ Ib, Ic [custom]	Vce Saturation (Max) @ Ib, Ic [custom]	Vce Saturation (Max) @ Ib, Ic	Supplier Device Package
Microchip Technology JANTX2N6649	Through Hole	Military	1000 hFE	60 V	MIL-PRF-19500/527	TO-204AA TO-3	5 W	PNP - Darlington	175 ░C	-65 °C	10 A	100 mA	3 V	TO-204AA (TO-3)

Catalog

Darlington PNP Silicon Power -40V -80V, -10A

Key Features

- The device package outlines is a diamond base, flange mount TO-204-AA package (formerly TO-3) for all encapsulated device types.

Description

This specification covers the performance requirements for PNP silicon, Darlington power, 2N6648, 2N6649 and 2N6650 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each encapsulated device as specified in MIL-PRF-19500/527.