1N6312 Series

Catalog

DIODE ZENER 3.3V 500MW DO35

Part	Current - Reverse Leakage @ Vr	Impedance (Max) (Zzt) [Max]	Voltage - Zener (Nom) (Vz)	Grade	Voltage - Forward (Vf) (Max) @ If	Qualification	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Supplier Device Package	Package / Case	Power - Max [Max]	Tolerance
Microchip Technology JANTXV1N6312C	5 µA	27 Ohms	3.3 V	Military	1.4 V	MIL-PRF-19500/533	175 ░C	-65 °C	Through Hole	DO-204AH (DO-35)	Axial DO-204AH DO-35	500 mW	2 %
Microchip Technology JANS1N6312US/TR	5 µA	27 Ohms	3.3 V	Military	1.4 V	MIL-PRF-19500/533	175 ░C	-65 °C	Surface Mount	B SQ-MELF	B SQ-MELF	500 mW	5 %
Microchip Technology JANS1N6312C	5 µA	27 Ohms	3.3 V	Military	1.4 V	MIL-PRF-19500/533	175 ░C	-65 °C	Through Hole	DO-204AH (DO-35)	Axial DO-204AH DO-35	500 mW	2 %
Microchip Technology 1N6312	5 µA	27 Ohms	3.3 V		1.4 V		347 °F	-65 ░C	Through Hole	DO-204AH (DO-35)	Axial DO-204AH DO-35	500 mW	5 %
Microchip Technology JANTX1N6312CUS	5 µA	27 Ohms	3.3 V	Military	1.4 V	MIL-PRF-19500/533	175 ░C	-65 °C	Surface Mount	B SQ-MELF	B SQ-MELF	500 mW	2 %
Microchip Technology JANTXV1N6312DUS	5 µA	27 Ohms	3.3 V	Military	1.4 V	MIL-PRF-19500/533	175 ░C	-65 °C	Surface Mount	B SQ-MELF	B SQ-MELF	500 mW	1 %
Microchip Technology JANS1N6312CUS	5 µA	27 Ohms	3.3 V	Military	1.4 V	MIL-PRF-19500/533	347 °F	-65 ░C	Through Hole	DO-204AH (DO-35)	Axial DO-204AH DO-35	500 mW	2 %
Microchip Technology JAN1N6312C	5 µA	27 Ohms	3.3 V	Military	1.4 V	MIL-PRF-19500/533	175 ░C	-65 °C	Through Hole	DO-204AH (DO-35)	Axial DO-204AH DO-35	500 mW	2 %
Microchip Technology JAN1N6312D	5 µA	27 Ohms	3.3 V	Military	1.4 V	MIL-PRF-19500/533	175 ░C	-65 °C	Through Hole	DO-204AH (DO-35)	Axial DO-204AH DO-35	500 mW	1 %
Microchip Technology JANTX1N6312D	5 µA	27 Ohms	3.3 V	Military	1.4 V	MIL-PRF-19500/533	175 ░C	-65 °C	Through Hole	DO-204AH (DO-35)	Axial DO-204AH DO-35	500 mW	1 %