SCT040HU65G3AG Series

Automotive-grade silicon carbide Power MOSFET 650 V, 40 mOhm typ., 30 A in an HU3PAK package

Catalog

Automotive-grade silicon carbide Power MOSFET 650 V, 40 mOhm typ., 30 A in an HU3PAK package

Part	Drive Voltage (Max Rds On, Min Rds On)	Qualification	Power Dissipation (Max)	Operating Temperature [Max]	Operating Temperature [Min]	FET Type	Grade	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max) [Max]	Vgs (Max) [Min]	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Package / Case	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Mounting Type
STMicroelectronics SCT040HU65G3AG	15 V 18 V	AEC-Q101	221 W	175 °C	-55 °C	N-Channel	Automotive	39.5 nC	22 V	-10 V	HU3PAK	30 A	650 V	4.2 V	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA	55 mOhm	920 pF	Surface Mount

Catalog

Automotive-grade silicon carbide Power MOSFET 650 V, 40 mOhm typ., 30 A in an HU3PAK package

Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rdgeneration SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.