Catalog
650V, 10A, THD, Silicon-carbide (SiC) SBD
Description
AI
Switching loss reduced, enabling high-speed switching.
Beta
⌘K
650V, 10A, THD, Silicon-carbide (SiC) SBD
650V, 10A, THD, Silicon-carbide (SiC) SBD
| Part | Voltage - DC Reverse (Vr) (Max) [Max] | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Package / Case | Speed | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If [Max] | Mounting Type | Capacitance @ Vr, F | Operating Temperature - Junction | Technology | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | 650 V | 0 ns | 50 µA | TO-220-2 | 500 mA | 10 A | 1.5 V | Through Hole | 500 pF | 175 °C | SiC (Silicon Carbide) Schottky | TO-220ACFP |