Catalog
Low Noise Amplifier, 0.01 GHz to 9 GHz
Key Features
• Low noise figure: 1.9 dB typical at 0.01 GHz to 7 GHz
• Single positive supply (self biased)
• High gain: 19.5 dB typical at 0.01 GHz to 7 GHz
• High OIP3: 35 dBm typical at 0.01 GHz to 7 GHz
• RoHS-compliant, 2 mm × 2 mm, 6-lead LFCSP
• Support aerospace applications
• Wafer diffusion lot traceability
• Radiation benchmark
• Total ionizing dose (TID): 30 krads
• No single event latchup (SEL) occurs at ≤ 62.4 MeV-cm2/mg linear energy transfer
Description
AI
For more information on the HMC8413LP2FETR-CSL, please refer to the corresponding data sheet.The HMC8413 is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise wideband amplifier that operates from 0.01 GHz to 9 GHz.The HMC8413 provides a typical gain of 19.5 dB, a 1.9 dB typical noise figure, and a typical output third-order intercept (OIP3) of 35 dBm at 0.01 GHz to 7 GHz, requiring only 95 mA from a 5 V supply voltage. The saturated output power (PSAT) of 22 dBm typical at 0.01 GHz to 7 GHz enables the low noise amplifier to function as a local oscillator (LO) driver for many of Analog Devices, Inc., balanced, in-phase/quadrature (I/Q) or image rejection mixers.The HMC8413 also features inputs and outputs that are internally matched to 50 Ω, making the device ideal for surface-mounted technology (SMT)-based, high capacity microwave radio applications.The HMC8413 is housed in an RoHS-compliant, 2 mm × 2 mm, 6-lead LFCSP.APPLICATIONSTest instrumentationMilitary communicationsMilitary radarTelecommunications
