GANB8R0-040CBA Series

40 V, 8.0 mOhm bi-directional Gallium Nitride (GaN) FET in a 1.7 mm x 1.7 mm Wafer Level Chip-Scale Package (WLCSP)

Catalog

40 V, 8.0 mOhm bi-directional Gallium Nitride (GaN) FET in a 1.7 mm x 1.7 mm Wafer Level Chip-Scale Package (WLCSP)

Part	Rds On (Max) @ Id, Vgs	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Technology	Vgs (Max) [Max]	Supplier Device Package [x]	Supplier Device Package	Supplier Device Package [y]	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Current - Continuous Drain (Id) @ 25°C
Nexperia USA Inc. GANB8R0-040CBAZ	8 mOhm	N-Channel	5 V	40 V	-40 C	125 °C	16-UFBGA WLCSP	GaNFET (Gallium Nitride)	6 V	1.7	16-WLCSP	1.7	2.4 V	15 W	566 pF	Surface Mount	14 A

Catalog

40 V, 8.0 mOhm bi-directional Gallium Nitride (GaN) FET in a 1.7 mm x 1.7 mm Wafer Level Chip-Scale Package (WLCSP)

Description

The GANB8R0-040CBA is a 40 V, 8.0 mΩ bi-directional Gallium Nitride (GaN) High Electron-Mobility-Transistor (HEMT) in a Wafer Level Chip-Scale (WLCSP) package. It is a normally-off e-mode device offering superior performance.