GC4900-Mesa-Beamlead-PIN Series

Mesa-Beam-Lead-PIN Through Ka Band

Catalog

Mesa-Beam-Lead-PIN Through Ka Band

Part	Capacitance @ Vr, F	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Resistance @ If, F	Diode Type	Voltage - Peak Reverse (Max) [Max]	Current - Max [Max]	Power Dissipation (Max) [Max]
Microchip Technology GC4944-12	0.025 pF	-65 ░C	150 °C	2-SMD Flat Leads	3.5 Ohm	PIN - Single
Microchip Technology GC4941-12	0.06 pF	-65 ░C	150 °C	2-SMD Flat Leads	1.5 Ohm	PIN - Single
Microchip Technology GC4921-112	0.02 pF	-65 ░C	150 °C	2-SMD Flat Leads	6.5 Ohm		100 V	100 mA	1 W

Catalog

Mesa-Beam-Lead-PIN Through Ka Band

Key Features

- Suitable for applications through 40 GHz

- 5 Gram Typical Pull Strength

- Very Low RS/CJ (Loss/Isolation) Products with Low Inductance

- High Quality, High Resistivity Epitaxy

- Stable Low Leakage Passivation with Rugged Glass Body

- RoHS Compliant

- Wide Bandwidth / High Switching Speed

Description

Mesa Beam Lead PIN diodes are designed for very low inductance low resistance and moderately low capacitance with ultra fast switching characteristics. These devices are designed with a narrow base width a high quality intrinsic 'I' layer that provides low loss high isolation and ultra high speed switching characteristics. GC4902 – GC4946 are suitable for applications through 26 GHz. GC4921-112 & GC4922-112 are suitable for applications through 40 GHz, Ka band.