MSC020SDA120 Series

1200V Silicon Carbide (SiC) Schottky Barrier Diodes (SBDs)

Catalog

1200V Silicon Carbide (SiC) Schottky Barrier Diodes (SBDs)

Part	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Package / Case	Reverse Recovery Time (trr)	Current - Average Rectified (Io)	Voltage - DC Reverse (Vr) (Max) [Max]	Capacitance @ Vr, F	Supplier Device Package	Speed	Current - Reverse Leakage @ Vr	Technology	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]
Microchip Technology MSC020SDA120S	Surface Mount	1.8 V	D3PAK (2 Leads + Tab) TO-268-3 TO-268AA	0 ns	49 A	1.2 kV	1130 pF	D3PAK	No Recovery Time	200 µA	SiC (Silicon Carbide) Schottky	175 ░C	-55 C
Microchip Technology MSC020SDA120K	Through Hole	1.8 V	TO-220-2	0 ns	49 A	1.2 kV	1130 pF	TO-220-2	No Recovery Time	200 µA	SiC (Silicon Carbide) Schottky	175 ░C	-55 C

Catalog

1200V Silicon Carbide (SiC) Schottky Barrier Diodes (SBDs)

Key Features

• * AEC-Q101 Qualified

• * No reverse recovery

• * Low forward voltage

• * Low leakage current

• * Avalanche-energy rated

• * RoHS compliant

Description

MSC020SDA120 is part of our newest family of SiC Schottky Barrier Diode (SBD) devices. Microchip's SiC solutions focus on high performance helping to maximize system efficiency and minimize system weight and size. Microchip's proven SiC reliability also ensures no performance degradation over the life of the end equipment.