STPSC1006 Series

Catalog

DIODE SIL CARBIDE 600V 10A D2PAK

Part	Technology	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If	Capacitance @ Vr, F	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io)	Supplier Device Package	Mounting Type	Speed	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Package / Case	Reverse Recovery Time (trr)	Voltage - Forward (Vf) (Max) @ If [Max]
STMicroelectronics STPSC1006G-TR	SiC (Silicon Carbide) Schottky	150 µA	1.7 V	650 pF	600 V	10 A	D2PAK	Surface Mount	500 mA	-40 °C	175 ░C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	0 ns
STMicroelectronics STPSC1006D	SiC (Silicon Carbide) Schottky	300 µA		650 pF	600 V	10 A	TO-220AC	Through Hole	500 mA	-40 °C	175 ░C	TO-220-2	0 ns	1.75 V