MSC030SDA330 Series

3300V Silicon Carbide (SiC) Schottky Barrier Diodes (SBDs)

Catalog

3300V Silicon Carbide (SiC) Schottky Barrier Diodes (SBDs)

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Current - Average Rectified (Io)	Supplier Device Package	Reverse Recovery Time (trr)	Mounting Type	Technology	Speed
Microchip Technology MSC030SDA330B	3300 V	TO-247-2	30 A	TO-247	0 ns	Through Hole	SiC (Silicon Carbide) Schottky	No Recovery Time

Catalog

3300V Silicon Carbide (SiC) Schottky Barrier Diodes (SBDs)

Key Features

• * No reverse recovery

• * Low forward voltage

• * Low leakage current

• * Avalanche-energy rated

• * RoHS compliant

Description

MSC030SDA330 is part of our newest family of SiC Schottky Barrier Diode (SBD) devices. Microchip's SiC solutions focus on high performance helping to maximize system efficiency and minimize system weight and size. Microchip's proven SiC reliability also ensures no performance degradation over the life of the end equipment.