STF80N240K6 Series
N-channel 800 V, 197 mOhm typ., 16 A MDmesh K6 Power MOSFET in a TO-220FP package
Manufacturer: STMicroelectronics
Catalog
N-channel 800 V, 197 mOhm typ., 16 A MDmesh K6 Power MOSFET in a TO-220FP package
| Part | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | FET Type | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Technology | Input Capacitance (Ciss) (Max) @ Vds [Max] | Supplier Device Package | Operating Temperature [Max] | Operating Temperature [Min] | Package / Case | Mounting Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 STMicroelectronics | 30 V | 10 V | 27 W | 220 mOhm | N-Channel | 16 A | 800 V | MOSFET (Metal Oxide) | 1350 pF | TO-220FP | 150 °C | -55 °C | TO-220-3 Full Pack | Through Hole | 25.9 nC | 4 V |
Description
AI
This very high voltage N-channel Power MOSFET is designed using the ultimate MDmesh K6 technology based on 20 years STMicroelectronics experience on super junction technology. The result is the best-in-class on-resistance per area and gate charge for applications requiring superior power density and high efficiency.