JAN2N6052-Transistor Series

MIL-PRF-19500/501

Catalog

MIL-PRF-19500/501

Part	Grade	Operating Temperature [Min]	Operating Temperature [Max]	Qualification	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Package / Case	Transistor Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Power - Max [Max]	Current - Collector Cutoff (Max) [Max]	Mounting Type	Current - Collector (Ic) (Max) [Max]
Microchip Technology 2N6052
Microchip Technology JAN2N6052	Military	-55 °C	175 ░C	MIL-PRF-19500/501	1000	TO-3	PNP - Darlington	100 V	3 V	150 W	1 mA	Through Hole	12 A

Catalog

MIL-PRF-19500/501

Key Features

- JEDEC registered 2N6051 and 2N6052

- JAN, JANTX, and JANTXV qualifications are available per MIL-PRF-19500/501

- RoHS compliant versions available (commercial grade only)

- Military, space and other high reliability applications

- High frequency response

- TO-204AA (TO-3) case with isolated terminals.

Description

This specification covers the performance requirements for PNP, Darlington, silicon, power, 2N6051 and 2N6052 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each encapsulated device as specified in MIL-PRF-19500/501. The device package outlines are as follows: TO-3 for all encapsulated device types.