2N3719-Transistor Series

Catalog

POWER BJT TO-5 ROHS COMPLIANT: YES

Part	DC Current Gain (hFE) (Min) @ Ic, Vce	Vce Saturation (Max) @ Ib, Ic	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	Package / Case	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Transistor Type	Supplier Device Package	Frequency - Transition	Mounting Type
Microchip Technology 2N3719	25 hFE	1.5 V	3 A	6 W	TO-205AA TO-5-3 Metal Can	10 µA	40 V	PNP	TO-5AA	60 MHz	Through Hole

Catalog

Key Features

- High-Speed Switching

- Medium-Current Switching

- High-Frequency Amplifiers

- Collector-Emitter Sustaining Voltage: VCEO(SUS) = 60 Vdc (Min) - 2N3720

- DC Current Gain: hFE = 25-180 @ IC = 1.0 Adc

- Low Collector-Emitter Saturation Voltage: VCE(sat) = 0.75 Vdc @ IC = 1.0 Adc

- High Current-Gain - Bandwidth Product: fT = 90 MHz (Typ).

Description

This family of 2N3719 through 2N3720 power PNP transistors are produced in a PLANAR process. These transistors are available in TO-205AA (TO-5) packaging. This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, saturation voltages, high current gain, and safe operating areas. They are intended for use in Commercial, Industrial, and Military power switching, amplifier, and regulator applications. Ultrasonically bonded leads and controlled die mount techniques are utilized to further increase the SOA capability and inherent reliability of these devices. The temperature range to 200°C permits reliable operation in high ambients, and the hermetically sealed package insures maximum reliability and long life.