STL8P4LLF6 Series

P-channel 40 V, 0.0175 Ohm typ., 8 A STripFET F6 Power MOSFET in a PowerFLAT 3.3 x 3.3 package

Catalog

P-channel 40 V, 0.0175 Ohm typ., 8 A STripFET F6 Power MOSFET in a PowerFLAT 3.3 x 3.3 package

Part	Operating Temperature	Power Dissipation (Max)	Technology	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Package / Case	Rds On (Max) @ Id, Vgs	Supplier Device Package	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Mounting Type	FET Type
STMicroelectronics STL8P4LLF6	150 °C	2.9 W	MOSFET (Metal Oxide)	8 A	22 nC	4.5 V 10 V	20 V	8-PowerVDFN	20.5 mOhm	PowerFlat™ (3.3x3.3)	40 V	2.5 V	Surface Mount	P-Channel

Catalog

P-channel 40 V, 0.0175 Ohm typ., 8 A STripFET F6 Power MOSFET in a PowerFLAT 3.3 x 3.3 package

Description

This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on)in all packages.