STB16N90K5 Series

N-channel 900 V, 280 mOhm typ., 15 A MDmesh K5 Power MOSFET in a D2PAK package

Catalog

N-channel 900 V, 280 mOhm typ., 15 A MDmesh K5 Power MOSFET in a D2PAK package

Part	Package / Case	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs (Max)	Rds On (Max) @ Id, Vgs	Mounting Type	Vgs(th) (Max) @ Id	Operating Temperature [Max]	Operating Temperature [Min]	Technology	Gate Charge (Qg) (Max) @ Vgs	FET Type	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)
STMicroelectronics STB16N90K5	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	900 V	10 V	TO-263 (D2PAK)	1027 pF	30 V	330 mOhm	Surface Mount	5 V	150 °C	-55 °C	MOSFET (Metal Oxide)	29.7 nC	N-Channel	15 A	190 W

Catalog

N-channel 900 V, 280 mOhm typ., 15 A MDmesh K5 Power MOSFET in a D2PAK package

Description

This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.