Catalog
650V 20A TO-220FM, Low-noise Power MOSFET
Description
AI
R6520ENX is a power MOSFET with low on-resistance and fast switching, suitable for the switching application.
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650V 20A TO-220FM, Low-noise Power MOSFET
650V 20A TO-220FM, Low-noise Power MOSFET
| Part | Supplier Device Package | Power Dissipation (Max) | Mounting Type | Vgs (Max) | FET Type | Vgs(th) (Max) @ Id | Operating Temperature | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Package / Case | Gate Charge (Qg) (Max) @ Vgs | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | TO-220FM | 68 W | Through Hole | 20 V | N-Channel | 4 V | 150 °C | 20 A | 10 V | 650 V | 1400 pF | TO-220-3 Full Pack | 61 nC | MOSFET (Metal Oxide) |