R6025JNZ4 Series

600V 25A TO-247, PrestoMOS™ with integrated high-speed diode

Catalog

600V 25A TO-247, PrestoMOS™ with integrated high-speed diode

Part	Technology	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Supplier Device Package	FET Type	Power Dissipation (Max) [Max]	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Operating Temperature	Vgs (Max)	Package / Case	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]
Rohm Semiconductor R6025JNZC17	MOSFET (Metal Oxide)	57 nC	182 mOhm	TO-3PF	N-Channel	85 W	Through Hole	15 V	1900 pF	7 V	150 °C	30 V	TO-3P-3 Full Pack	600 V	25 A
Rohm Semiconductor R6025JNZ4C13	MOSFET (Metal Oxide)	57 nC	182 mOhm	TO-247G	N-Channel	306 W	Through Hole	15 V	1900 pF	7 V		30 V	TO-247-3	600 V	25 A	-55 °C	150 °C

Catalog

600V 25A TO-247, PrestoMOS™ with integrated high-speed diode

Key Features

• Fast reverse recovery time (trr), Low on-resistance, Fast switching speed, Drive circuits can be simple, Pb-free plating ; RoHS compliant

Description

R6025JNZ4 is a power MOSFET with fast reverse recovery time (trr), suitable for the switching applications.PrestoMOS™ series, R60xxJNx series increases design flexibility while maintaining the industry’s fastest reverse recovery time (trr) optimized for EV charging stations and motor drive in home appliances such as refrigerators and Air Conditioners (ACs).