STW24N60M2 Series

N-channel 600 V, 0.168 Ohm typ., 18 A MDmesh M2 Power MOSFET in TO-247 package

Catalog

N-channel 600 V, 0.168 Ohm typ., 18 A MDmesh M2 Power MOSFET in TO-247 package

Part	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Technology	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Vgs (Max)	Mounting Type	Rds On (Max) @ Id, Vgs	Operating Temperature [Max]	Operating Temperature [Min]	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Supplier Device Package
STMicroelectronics STW24N60M2	150 W	1060 pF	TO-247-3	MOSFET (Metal Oxide)	N-Channel	10 V	29 nC	4 V	25 V	Through Hole	190 mOhm	150 °C	-55 °C	18 A	600 V	TO-247-3

Catalog

N-channel 600 V, 0.168 Ohm typ., 18 A MDmesh M2 Power MOSFET in TO-247 package

Description

These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters.