2N1890S-Transistor Series

NPN Silicon Low-Power 30V to 60V, 0.5A

Catalog

NPN Silicon Low-Power 30V to 60V, 0.5A

Part	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector Cutoff (Max) [Max]	Power - Max [Max]	Transistor Type	Supplier Device Package	Vce Saturation (Max) @ Ib, Ic	Current - Collector (Ic) (Max) [Max]	Package / Case
Microchip Technology 2N1890S	Through Hole	80 V	100	0.01 µA	800 mW	NPN	TO-39 (TO-205AD)	5 V	500 mA	TO-205AD TO-39-3 Metal Can

Catalog

NPN Silicon Low-Power 30V to 60V, 0.5A

Key Features

- The device packages for the encapsulated device types are as follows: (2N1711 and 2N1890) Three terminal round metal can TO-205AD (formerly TO-39) and TO-205-AA (formerly TO-5).

Description

This specification covers the performance requirements for NPN, silicon, low-power, 2N1711 and 2N1890 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each device type as specified in MIL-PRF-19500/225.