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Nch 30V 39A Middle Power MOSFET
Description
AI
RQ3E180BN is low on-resistance and high power package MOSFET for switching application.
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Nch 30V 39A Middle Power MOSFET
Nch 30V 39A Middle Power MOSFET
| Part | Gate Charge (Qg) (Max) @ Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds | Package / Case | Mounting Type | Technology | FET Type | Operating Temperature | Power Dissipation (Max) | Supplier Device Package [x] | Supplier Device Package [custom] | Supplier Device Package [y] | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | 72 nC | 2.5 V | 18 A 39 A | 20 V | 3.9 mOhm | 3500 pF | 8-PowerVDFN | Surface Mount | MOSFET (Metal Oxide) | N-Channel | 150 °C | 2 W 20 W | 3.2 | 8-HSMT | 3 | 4.5 V 10 V | 30 V | |||
 Rohm Semiconductor | 39 nC | 1.5 V | 18 A 30 A | 12 V | 4.5 mOhm | 8-PowerVDFN | Surface Mount | MOSFET (Metal Oxide) | N-Channel | 150 °C | 2 W 30 W | 3.2 | 8-HSMT | 3 | 30 V | 4290 pF | 2.5 V | 4.5 V |