2N3634UB-Transistor Series

PNP Silicon Amplifier -140V, -1A

Catalog

PNP Silicon Amplifier -140V, -1A

Part	Voltage - Collector Emitter Breakdown (Max)	Current - Collector Cutoff (Max) [Max]	Current - Collector (Ic) (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Supplier Device Package	Package / Case	Transistor Type	Mounting Type	Vce Saturation (Max) @ Ib, Ic	Power - Max [Max]
Microchip Technology 2N3634UB	140 V	10 µA	1 A	50 hFE	UB	3-SMD No Lead	PNP	Surface Mount	600 mV	1 W

Catalog

PNP Silicon Amplifier -140V, -1A

Key Features

- The device package for the encapsulated device type are as follows: TO-5 and TO-39 and surface mount.

- The dimensions and topography for JANHC and JANKC unencapsulated die are as outlined in MIL-PRF-19500/357.

Description

This specification covers the performance requirements for PNP, silicon, radiation hardened, low-power amplifier, and switching 2N3634 through 2N3637 transistors. Four levels of product assurance are provided for each encapsulated device (JAN, JANTX, JANTXV and JANS) as specified in MIL-PRF-19500/357 and two levels of product assurance are provided for unencapsulated die (JANHC and JANKC).