SCTH35 Series

Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm (typ. TJ = 25 C) in an H2PAK-7 package

Catalog

Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm (typ. TJ = 25 C) in an H2PAK-7 package

Part	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs	Vgs (Max) [Max]	Vgs (Max) [Min]	Qualification	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Max]	Operating Temperature [Min]	Gate Charge (Qg) (Max) @ Vgs	Grade	Drain to Source Voltage (Vdss)	Package / Case	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Supplier Device Package	FET Type	Mounting Type	Vgs(th) (Max) @ Id
STMicroelectronics SCTH35N65G2V-7AG	1370 pF	208 W	67 mOhm	22 V	-10 V	AEC-Q101	45 A	175 °C	-55 °C	73 nC	Automotive	650 V	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA	20 V	18 V	H2PAK-7	N-Channel	Surface Mount	5 V

Catalog

Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm (typ. TJ = 25 C) in an H2PAK-7 package

Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2ndgeneration SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.