SCT055H65G3AG Series

Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in an H2PAK-7 package

Catalog

Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in an H2PAK-7 package

Part	Qualification	Rds On (Max) @ Id, Vgs	FET Type	Power Dissipation (Max)	Grade	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Vgs (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Supplier Device Package	Vgs(th) (Max) @ Id	Mounting Type
STMicroelectronics SCT055H65G3AG	AEC-Q101	72 mOhm	N-Channel	185 W	Automotive	30 A	15 V 18 V	721 pF	175 °C	-55 °C	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA	-5 V 18 V	29 nC	650 V	H2PAK-7	4.2 V	Surface Mount

Catalog

Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in an H2PAK-7 package

Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.