Isolators and Solid State Relays for Enhanced Safety and Efficiency | Toshiba, Photocoupler (phototransistor output), DC input, 3750 Vrms, SO16
Isolators and Solid State Relays for Enhanced Safety and Efficiency | Toshiba, Photocoupler (phototransistor output), DC input, 3750 Vrms, SO16
Isolators and Solid State Relays for Enhanced Safety and Efficiency | Toshiba, Photocoupler (phototransistor output), DC input, 3750 Vrms, SO16
| Part | Current - DC Forward (If) (Max) [Max] | Output Type | Voltage - Forward (Vf) (Typ) | Vce Saturation (Max) [Max] | Current Transfer Ratio (Max) [Max] | Input Type | Voltage - Isolation | Mounting Type | Number of Channels [custom] | Current Transfer Ratio (Min) | Package / Case | Package / Case | Turn On / Turn Off Time (Typ) | Current - Output / Channel [custom] | Rise / Fall Time (Typ) | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Current Transfer Ratio (Min) [Min] | Current Transfer Ratio (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 50 mA | Transistor | 1.25 V | 300 mV | 600 % | DC | 3750 Vrms | Surface Mount | 4 | 50 % | 0.179 in 4.55 mm | 16-SOIC | 3 µs | 50 mA | 2 µs 3 µs | 16-SO | -55 C | 125 °C | ||
 Toshiba Semiconductor and Storage | 50 mA | Transistor | 1.25 V | 300 mV | 600 % | DC | 3750 Vrms | Surface Mount | 4 | 0.179 in 4.55 mm | 16-SOIC | 3 µs | 50 mA | 2 µs 3 µs | 16-SO | -55 C | 125 °C | 100 % | ||
Toshiba Semiconductor and Storage | 50 mA | Transistor | 1.25 V | 300 mV | 600 % | DC | 3750 Vrms | Surface Mount | 4 | 0.179 in 4.55 mm | 16-SOIC | 3 µs | 50 mA | 2 µs 3 µs | 16-SO | -55 C | 125 °C | 100 % | ||
Toshiba Semiconductor and Storage | 50 mA | Transistor | 1.25 V | 300 mV | 600 % | DC | 3750 Vrms | Surface Mount | 4 | 50 % | 0.179 in 4.55 mm | 16-SOIC | 3 µs | 50 mA | 2 µs 3 µs | 16-SO | -55 C | 125 °C | ||
 Toshiba Semiconductor and Storage | 50 mA | Transistor | 1.25 V | 300 mV | DC | 3750 Vrms | Surface Mount | 4 | 100 % | 0.179 in 4.55 mm | 16-SOIC | 3 µs | 50 mA | 2 µs 3 µs | 16-SO | -55 C | 125 °C | 600 % | ||
Toshiba Semiconductor and Storage | 50 mA | Transistor | 1.25 V | 300 mV | DC | 3750 Vrms | Surface Mount | 4 | 50 % | 0.179 in 4.55 mm | 16-SOIC | 3 µs | 50 mA | 2 µs 3 µs | 16-SO | -55 C | 125 °C | 600 % | ||
Toshiba Semiconductor and Storage | 50 mA | Transistor | 1.25 V | 300 mV | DC | 3750 Vrms | Surface Mount | 4 | 100 % | 0.179 in 4.55 mm | 16-SOIC | 3 µs | 50 mA | 2 µs 3 µs | 16-SO | -55 C | 125 °C | 600 % | ||
Toshiba Semiconductor and Storage | 50 mA | Transistor | 1.25 V | 300 mV | 600 % | DC | 3750 Vrms | Surface Mount | 4 | 0.179 in 4.55 mm | 16-SOIC | 3 µs | 50 mA | 2 µs 3 µs | 16-SO | -55 C | 125 °C | 100 % | ||
Toshiba Semiconductor and Storage | 50 mA | Transistor | 1.25 V | 300 mV | DC | 3750 Vrms | Surface Mount | 4 | 50 % | 0.179 in 4.55 mm | 16-SOIC | 3 µs | 50 mA | 2 µs 3 µs | 16-SO | -55 C | 125 °C | 600 % |