STF11NM60ND Series

N-channel 600 V, 370 mOhm typ., 10 A FDmesh II Power MOSFET in a TO-220FP package

Catalog

N-channel 600 V, 370 mOhm typ., 10 A FDmesh II Power MOSFET in a TO-220FP package

Part	Mounting Type	Drain to Source Voltage (Vdss)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Technology	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	FET Type
STMicroelectronics STF11NM60ND	Through Hole	600 V	TO-220-3 Full Pack	850 pF	450 mOhm	10 V	5 V	30 nC	25 V	25 W	10 A	MOSFET (Metal Oxide)	TO-220FP	150 °C	-55 °C	N-Channel

Catalog

N-channel 600 V, 370 mOhm typ., 10 A FDmesh II Power MOSFET in a TO-220FP package

Description

This FDmesh II Power MOSFET with fast-recovery body diode is produced using MDmesh II technology. Utilizing a new strip-layout vertical structure, this device features low on-resistance and superior switching performance. It is ideal for bridge topologies and ZVS phase-shift converters.