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650V 76A TO-247, Low-noise Power MOSFET
Description
AI
R6576ENZ4 is a power MOSFET for switching applications.
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650V 76A TO-247, Low-noise Power MOSFET
650V 76A TO-247, Low-noise Power MOSFET
| Part | Vgs (Max) | Operating Temperature | Power Dissipation (Max) | FET Type | Supplier Device Package | Package / Case | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Technology | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs [Max] | Drive Voltage (Max Rds On, Min Rds On) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | 20 V | 150 °C | 735 W | N-Channel | TO-247 | TO-247-3 | 6500 pF | Through Hole | MOSFET (Metal Oxide) | 650 V | 4 V | 260 nC | 10 V | 76 A | 46 mOhm |
 Rohm Semiconductor | 20 V | 150 °C | 735 W | N-Channel | TO-247G | TO-247-3 | 7400 pF | Through Hole | MOSFET (Metal Oxide) | 650 V | 5 V | 165 nC | 10 V | 76 A | 46 mOhm |