BSM300C12P3E201 Series

1200V, 300A, Boost Chopper, Full SiC-Power Module with Trench MOSFET

Catalog

1200V, 300A, Boost Chopper, Full SiC-Power Module with Trench MOSFET

Part	Mounting Type	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Current - Continuous Drain (Id) @ 25°C	FET Type	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Configuration	Drain to Source Voltage (Vdss)	Technology	Power - Max [Max]
Rohm Semiconductor BSM300C12P3E201	Chassis Mount	1360 W	1200 V	Module	150 °C	-40 °C	Module	300 A	N-Channel	5.6 V	15000 pF
Rohm Semiconductor BSM300D12P2E001	Chassis Mount		1200 V	Module	150 °C	-40 °C	Module	300 A				2 N-Channel (Half Bridge)	1.2 kV	Silicon Carbide (SiC)	1875 W

Catalog

1200V, 300A, Boost Chopper, Full SiC-Power Module with Trench MOSFET

Key Features

• Low surge, low switching loss., High-speed switching possible., Reduced temperature dependance.

Description

BSM300C12P3E201 is a SiC (silicon carbide) power module with Low surge and low switching loss, suitable for motor drive, converter, photovoltaics, wind power generation.