1200V, 300A, Boost Chopper, Full SiC-Power Module with Trench MOSFET
1200V, 300A, Boost Chopper, Full SiC-Power Module with Trench MOSFET
1200V, 300A, Boost Chopper, Full SiC-Power Module with Trench MOSFET
| Part | Power Dissipation (Max) | Supplier Device Package | Drain to Source Voltage (Vdss) | Operating Temperature [Min] | Operating Temperature [Max] | Package / Case | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds [Max] | Vgs(th) (Max) @ Id | Mounting Type | FET Type | Configuration | Technology | Power - Max [Max] | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | 1.36 kW | Module | 1.2 kV | -40 °C | 150 °C | Module | 300 A | 15000 pF | 5.6 V | Chassis Mount | N-Channel | ||||
 Rohm Semiconductor | Module | 1.2 kV | -40 °C | 150 °C | Module | 300 A | 35000 pF | Chassis Mount | 2 N-Channel | Silicon Carbide (SiC) | 1875 W | 1200 V |