STW23N85K5 Series

N-channel 850 V, 0.2 Ohm typ., 19 A MDmesh K5 Power MOSFET in a TO-247 package

Catalog

N-channel 850 V, 0.2 Ohm typ., 19 A MDmesh K5 Power MOSFET in a TO-247 package

Part	Input Capacitance (Ciss) (Max) @ Vds [Max]	Operating Temperature	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Package / Case	Rds On (Max) @ Id, Vgs	Mounting Type	Supplier Device Package	Vgs (Max)	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id
STMicroelectronics STW23N85K5	1650 pF	150 °C	N-Channel	10 V	850 V	TO-247-3	275 mOhm	Through Hole	TO-247-3	30 V	250 W	19 A	MOSFET (Metal Oxide)	38 nC	5 V

Catalog

N-channel 850 V, 0.2 Ohm typ., 19 A MDmesh K5 Power MOSFET in a TO-247 package

Description

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.