LMG3410R070 Series
600-V 70mΩ GaN with integrated driver and protection
Manufacturer: Texas Instruments
Catalog
600-V 70mΩ GaN with integrated driver and protection
Key Features
• TI GaN Process Qualified Through Accelerated Reliability In-application Hard-switching Mission ProfilesEnables High Density Power Conversion DesignsSuperior System Performance Over Cascode or Stand-alone GaN FETsLow Inductance 8mm x 8mm QFN Package for Ease of Design, and LayoutAdjustable Drive Strength for Switching Performance and EMI ControlDigital Fault Status Output SignalOnly +12 V Unregulated Supply NeededIntegrated Gate DriverZero Common Source Inductance20 ns Propagation Delay for MHz OperationProcess-tuned Gate Bias Voltage for Reliability25 to 100V/ns User Adjustable Slew RateRobust ProtectionRequires No External Protection ComponentsOver-current Protection with <100ns Response>150V/ns Slew Rate ImmunityTransient Overvoltage ImmunityOvertemperature ProtectionUVLO Protection on All Supply RailsDevice Options:LMG3410R070: Latched Overcurrent ProtectionLMG3411R070: Cycle-by-cycle Overcurrent ProtectionTI GaN Process Qualified Through Accelerated Reliability In-application Hard-switching Mission ProfilesEnables High Density Power Conversion DesignsSuperior System Performance Over Cascode or Stand-alone GaN FETsLow Inductance 8mm x 8mm QFN Package for Ease of Design, and LayoutAdjustable Drive Strength for Switching Performance and EMI ControlDigital Fault Status Output SignalOnly +12 V Unregulated Supply NeededIntegrated Gate DriverZero Common Source Inductance20 ns Propagation Delay for MHz OperationProcess-tuned Gate Bias Voltage for Reliability25 to 100V/ns User Adjustable Slew RateRobust ProtectionRequires No External Protection ComponentsOver-current Protection with <100ns Response>150V/ns Slew Rate ImmunityTransient Overvoltage ImmunityOvertemperature ProtectionUVLO Protection on All Supply RailsDevice Options:LMG3410R070: Latched Overcurrent ProtectionLMG3411R070: Cycle-by-cycle Overcurrent Protection
Description
AI
The LMG341xR070 GaN power stage with integrated driver and protection enables designers to achieve new levels of power density and efficiency in power electronics systems. The LMG341x’s inherent advantages over silicon MOSFETs include ultra-low input and output capacitance, zero reverse recovery to reduce switching losses by as much as 80%, and low switch node ringing to reduce EMI. These advantages enable dense and efficient topologies like the totem-pole PFC.
The LMG341xR070 provides a smart alternative to traditional cascode GaN and standalone GaN FETs by integrating a unique set of features to simplify design, maximize reliability and optimize the performance of any power supply. Integrated gate drive enables 100V/ns switching with near zero Vds ringing, <100 ns current limiting self-protects against unintended shoot-through events, Overtemperature shutdown prevents thermal runaway, and system interface signals provide self-monitoring capability.
The LMG341xR070 GaN power stage with integrated driver and protection enables designers to achieve new levels of power density and efficiency in power electronics systems. The LMG341x’s inherent advantages over silicon MOSFETs include ultra-low input and output capacitance, zero reverse recovery to reduce switching losses by as much as 80%, and low switch node ringing to reduce EMI. These advantages enable dense and efficient topologies like the totem-pole PFC.
The LMG341xR070 provides a smart alternative to traditional cascode GaN and standalone GaN FETs by integrating a unique set of features to simplify design, maximize reliability and optimize the performance of any power supply. Integrated gate drive enables 100V/ns switching with near zero Vds ringing, <100 ns current limiting self-protects against unintended shoot-through events, Overtemperature shutdown prevents thermal runaway, and system interface signals provide self-monitoring capability.