LM9061-Q1 Series
Automotive 7-V to 26-V high side protection controller
Manufacturer: Texas Instruments
Catalog
Automotive 7-V to 26-V high side protection controller
Key Features
• Qualified for Automotive ApplicationsAEC-Q100 Qualified With the Following Results:Device HBM ESD Classification Level 2Device CDM ESD Classification Level C4BWithstands 60-V Supply TransientsOvervoltage Shut-OFF With VCC> 30 VLossless Overcurrent Protection Latch-OFFCurrent Sense Resistor is Not RequiredMinimizes Power Loss With High Current LoadsProgrammable Delay of Protection Latch-OFFGradual Turnoff to Minimize Inductive Load Transient VoltagesCMOS Logic-Compatible ON and OFF Control InputQualified for Automotive ApplicationsAEC-Q100 Qualified With the Following Results:Device HBM ESD Classification Level 2Device CDM ESD Classification Level C4BWithstands 60-V Supply TransientsOvervoltage Shut-OFF With VCC> 30 VLossless Overcurrent Protection Latch-OFFCurrent Sense Resistor is Not RequiredMinimizes Power Loss With High Current LoadsProgrammable Delay of Protection Latch-OFFGradual Turnoff to Minimize Inductive Load Transient VoltagesCMOS Logic-Compatible ON and OFF Control Input
Description
AI
The LM9061 family consists of charge-pump devices which provides the gate drive to an external power MOSFET of any size configured as a high-side driver or switch. This includes multiple parallel connected MOSFETs for very high current applications. A CMOS logic-compatible ON and OFF input controls the output gate drive voltage. In the ON state, the charge pump voltage, which is well above the available VCCsupply, is directly applied to the gate of the MOSFET. A built-in 15-V Zener clamps the maximum gate to source voltage of the MOSFET. When commanded OFF a 110-µA current sink discharges the gate capacitances of the MOSFET for a gradual turnoff characteristic to minimize the duration of inductive load transient voltages and further protect the power MOSFET.
Lossless protection of the power MOSFET is a key feature of the LM9061. The voltage drop (VDS) across the power device is continually monitored and compared against an externally programmable threshold voltage. A small current-sensing resistor in series with the load, which causes a loss of available energy, is not required for the protection circuitry. If the VDSvoltage, due to excessive load current, exceeds the threshold voltage, the output is latched OFF in a more gradual fashion (through a 10-µA output current sink) after a programmable delay time interval.
The LM9061 family consists of charge-pump devices which provides the gate drive to an external power MOSFET of any size configured as a high-side driver or switch. This includes multiple parallel connected MOSFETs for very high current applications. A CMOS logic-compatible ON and OFF input controls the output gate drive voltage. In the ON state, the charge pump voltage, which is well above the available VCCsupply, is directly applied to the gate of the MOSFET. A built-in 15-V Zener clamps the maximum gate to source voltage of the MOSFET. When commanded OFF a 110-µA current sink discharges the gate capacitances of the MOSFET for a gradual turnoff characteristic to minimize the duration of inductive load transient voltages and further protect the power MOSFET.
Lossless protection of the power MOSFET is a key feature of the LM9061. The voltage drop (VDS) across the power device is continually monitored and compared against an externally programmable threshold voltage. A small current-sensing resistor in series with the load, which causes a loss of available energy, is not required for the protection circuitry. If the VDSvoltage, due to excessive load current, exceeds the threshold voltage, the output is latched OFF in a more gradual fashion (through a 10-µA output current sink) after a programmable delay time interval.
